{"@context":"https://schema.org","@type":"NewsArticle","generatedAt":"2026-07-28T06:20:51.496Z","headline":"三星计划在 HBM5 内存中导入 2nm 基础裸片，运行速率较 HBM4E 提升 50% 以上","description":"三星电子确认计划在 HBM5 世代应用 2nm 基础裸片，其运行速率预计较 HBM4E 提升 50% 以上。该内存堆栈选择 2nm 工艺旨在实现性能和能效的重大改进，基础裸片将支持更高密度的硅通孔 （TSV）。此前三星的 HBM4 和 HBM4E 均配备 4nm 基础裸片，其中 HBM4E 通过高密度器件实现了 14+ Gbps 高速运行。","url":"https://www.aioga.com/news/cms2klej901rwro3ff4vplzjv/","mainEntityOfPage":"https://www.aioga.com/news/cms2klej901rwro3ff4vplzjv/","datePublished":"2026-07-27T01:12:43.000Z","dateModified":"2026-07-27T01:12:43.000Z","inLanguage":"zh-CN","publisher":{"@type":"NewsMediaOrganization","name":"Aioga","url":"https://www.aioga.com"},"citation":["https://www.ithome.com/0/981/836.htm","https://aihot.virxact.com/items/cms2klej901rwro3ff4vplzjv"],"canonicalUrl":"https://www.aioga.com/news/cms2klej901rwro3ff4vplzjv/","directAnswer":{"@type":"Answer","text":"Aioga 编辑摘要：三星电子确认计划在 HBM5 世代应用 2nm 基础裸片，其运行速率预计较 HBM4E 提升 50% 以上。 Aioga 将其归入「行业动态」方向，重点关注它对真实使用和行业竞争的影响。","url":"https://www.aioga.com/news/cms2klej901rwro3ff4vplzjv/","dateCreated":"2026-07-27T01:12:43.000Z","author":{"@type":"Organization","@id":"https://www.aioga.com/authors/aioga-editorial/#editorial-team","name":"Aioga Editorial Team","url":"https://www.aioga.com/authors/aioga-editorial/"}},"evidence":[{"@type":"CreativeWork","name":"IT之家 source article","url":"https://www.ithome.com/0/981/836.htm","datePublished":"2026-07-27T01:12:43.000Z","provider":{"@type":"Organization","name":"IT之家","url":"https://www.ithome.com/0/981/836.htm"}},{"@type":"CreativeWork","name":"AIHot archive record","url":"https://aihot.virxact.com/items/cms2klej901rwro3ff4vplzjv","datePublished":"2026-07-27T01:12:43.000Z","provider":{"@type":"Organization","name":"AIHot","url":"https://aihot.virxact.com/items/cms2klej901rwro3ff4vplzjv"}}],"aggregationSource":"IT之家（RSS）","originalPublisher":{"name":"IT之家","url":"https://www.ithome.com/0/981/836.htm"},"article":{"id":"cms2klej901rwro3ff4vplzjv","slug":"cms2klej901rwro3ff4vplzjv","url":"https://www.aioga.com/news/cms2klej901rwro3ff4vplzjv/","title":"三星计划在 HBM5 内存中导入 2nm 基础裸片，运行速率较 HBM4E 提升 50% 以上","title_en":"进一步增强逻辑性能：三星电子计划在 HBM5 内存导入 2nm 基础裸片","summary":"三星电子确认计划在 HBM5 世代应用 2nm 基础裸片，其运行速率预计较 HBM4E 提升 50% 以上。该内存堆栈选择 2nm 工艺旨在实现性能和能效的重大改进，基础裸片将支持更高密度的硅通孔 （TSV）。此前三星的 HBM4 和 HBM4E 均配备 4nm 基础裸片，其中 HBM4E 通过高密度器件实现了 14+ Gbps 高速运行。","source":"IT之家（RSS）","sourceUrl":"https://www.ithome.com/0/981/836.htm","aiHotUrl":"https://aihot.virxact.com/items/cms2klej901rwro3ff4vplzjv","publishedAt":"2026-07-27T01:12:43.000Z","category":"行业动态","score":49,"selected":false,"articleBody":["IT之家：https://www.ithome.com/ 7 月 27 日消息，根据三星半导体官方今日发布的人物访谈，三星电子晶圆代工业务技术开发负责人구자흠进一步确认， 三星计划在 HBM5 世代应用 2nm 的基础裸片 。三星电子存储器业务开发副总裁 황상준 今年 3 月也进行了类似表态：https://www.ithome.com/0/930/083.htm。","구자흠提到， HBM5 的运行速率预计将较 HBM4E 提升 50% 以上 ，其基础裸片将支持更高密度的硅通孔 (TSV) 以满足行业需求。该内存堆栈选择 2nm 作为基础裸片工艺 旨在于性能和能效两方面实现重大改进 。","三星电子的 HBM4 和 HBM4E 上均配备 4nm 基础裸片，但这两个版本的基础裸片有所区别。三星电子发挥了其 4nm 节点的灵活性优势， 在 HBM4E 基础裸片上应用了高密度、超高性能器件 ，实现了 14+ Gbps 高速运行，而 金属层的更有效排列 则在降低功耗的同时优化散热路径。"],"articleImages":[{"sourceUrl":"https://img.ithome.com/newsuploadfiles/2026/7/47cdf569-672f-4cf8-9efe-0a141cf0cd4f.jpg?x-bce-process=image/format,f_auto","alt":"","afterParagraph":0,"url":"/media/articles/cms2klej901rwro3ff4vplzjv/8fe6230983ffeda4.webp"}],"mediaStatus":"ok","articleBodyZh":[],"translationStatus":"","bodyOrigin":"source-page","editorial":{"summary":"Aioga 编辑摘要：三星电子确认计划在 HBM5 世代应用 2nm 基础裸片，其运行速率预计较 HBM4E 提升 50% 以上。 Aioga 将其归入「行业动态」方向，重点关注它对真实使用和行业竞争的影响。","background":"背景分析：公司与行业类动态需要放在竞争格局、商业化路径、资本信号和监管环境中观察，单条公告不能代表最终结果。","viewpoint":"Aioga 判断：这条动态更适合作为行业观察信号，当前信息足以建立线索，但不足以推导长期结论。","implications":"影响分析：对相关团队而言，短期应先核对来源、可用范围和实际成本，再判断是否值得接入或跟进。","nextStep":"后续观察：继续观察官方文件、合作落地、收入或用户信号、竞品动作和监管后续。","evidenceRefs":["title","summary","articleBody"],"confidence":"medium","status":"published","aiGenerated":false,"autoApproved":true,"generatedBy":"rule-safe-fallback","generatedAt":"2026-07-28T06:29:10.480Z","sourceHash":"0eb57de2e91894ad","validation":{"passed":true,"mode":"rule-safe-fallback","checks":["schema","length","source-attribution","no-html"]}},"tags":["行业动态","IT之家（RSS）"],"translations":{"zh-CN":{"title":"三星计划在 HBM5 内存中导入 2nm 基础裸片，运行速率较 HBM4E 提升 50% 以上","summary":"三星电子确认计划在 HBM5 世代应用 2nm 基础裸片，其运行速率预计较 HBM4E 提升 50% 以上。该内存堆栈选择 2nm 工艺旨在实现性能和能效的重大改进，基础裸片将支持更高密度的硅通孔 （TSV）。此前三星的 HBM4 和 HBM4E 均配备 4nm 基础裸片，其中 HBM4E 通过高密度器件实现了 14+ Gbps 高速运行。","category":"行业动态","source":"IT之家","aggregationSource":"IT之家（RSS）","pageTitle":"三星计划在 HBM5 内存中导入 2nm 基础裸片，运行速率较 HBM4E 提升 50% 以上 - Aioga AI资讯","description":"三星电子确认计划在 HBM5 世代应用 2nm 基础裸片，其运行速率预计较 HBM4E 提升 50% 以上。该内存堆栈选择 2nm 工艺旨在实现性能和能效的重大改进，基础裸片将支持更高密度的硅通孔 （TSV）。此前三星的 HBM4 和 HBM4E 均配备 4nm 基础裸片，其中 HBM4E 通过高密度器件实现了 14+ Gbps 高速运行。","url":"https://www.aioga.com/news/cms2klej901rwro3ff4vplzjv/"},"en":{"title":"Samsung plans to introduce 2nm base dies in HBM5 memory, with operating speed more than 50% higher than HBM4E.","summary":"Samsung Electronics has confirmed plans to apply 2nm base dies in the HBM5 generation, with an expected operating speed increase of more than 50% compared to HBM4E. This memory stack chooses the 2nm process to achieve significant improvements in performance and energy efficiency, and the base dies will support higher-density through-silicon vias (TSVs). Previously, Samsung's HBM4 and HBM4E were both equipped with 4nm base dies, with HBM4E achieving high-speed operation over 14 Gbps through high-density devices.","category":"Industry","source":"IT之家（RSS）","aggregationSource":"IT之家（RSS）","pageTitle":"Samsung plans to introduce 2nm base dies in HBM5 memory, with operating speed more than 50% higher than HBM4E. - Aioga AI News","description":"Samsung Electronics has confirmed plans to apply 2nm base dies in the HBM5 generation, with an expected operating speed increase of more than 50% compared to HBM4E. This memory sta...","url":"https://www.aioga.com/en/news/cms2klej901rwro3ff4vplzjv/","contentTranslated":true,"sourceHash":"b37b2f9023069d68","translatedAt":"2026-07-27T02:02:56.574Z"},"ja":{"title":"サムスンはHBM5メモリに2nmベースのウェハーを導入する計画で、動作速度はHBM4Eより50%以上向上する予定です","summary":"サムスン電子は、HBM5 世代において 2nm ベースダイを採用する計画を確認しており、その動作速度は HBM4E よりも 50%以上向上すると見込まれています。このメモリスタックが 2nm プロセスを選択したのは、性能とエネルギー効率の大幅な改善を実現するためであり、ベースダイはより高密度のシリコン貫通ビア（TSV）をサポートします。以前のサムスンの HBM4 および HBM4E はいずれも 4nm ベースダイを搭載しており、HBM4E は高密度デバイスを通じて 14+ Gbps の高速動作を実現しています。","category":"業界動向","source":"IT之家（RSS）","aggregationSource":"IT之家（RSS）","pageTitle":"サムスンはHBM5メモリに2nmベースのウェハーを導入する計画で、動作速度はHBM4Eより50%以上向上する予定です - Aioga AIニュース","description":"サムスン電子は、HBM5 世代において 2nm ベースダイを採用する計画を確認しており、その動作速度は HBM4E よりも 50%以上向上すると見込まれています。このメモリスタックが 2nm プロセスを選択したのは、性能とエネルギー効率の大幅な改善を実現するためであり、ベースダイはより高密度のシリコン貫通ビア（TSV）をサポートします。以前のサムスンの HB...","url":"https://www.aioga.com/ja/news/cms2klej901rwro3ff4vplzjv/","contentTranslated":true,"sourceHash":"b37b2f9023069d68","translatedAt":"2026-07-27T02:03:00.718Z"},"ko":{"title":"삼성은 HBM5 메모리에 2nm 기반 웨이퍼를 도입할 계획이며, HBM4E에 비해 실행 속도가 50% 이상 향상될 예정입니다","summary":"삼성전자는 HBM5 세대에 2nm 기반 웨이퍼를 적용할 계획을 확인했으며, 이 메모리의 작동 속도는 HBM4E보다 50% 이상 향상될 것으로 예상됩니다. 이 메모리 스택은 성능과 에너지 효율의 큰 개선을 목표로 2nm 공정을 선택했으며, 기반 웨이퍼는 더 높은 밀도의 TSV(실리콘 관통 전극)를 지원할 것입니다. 이전에 삼성의 HBM4와 HBM4E는 모두 4nm 기반 웨이퍼를 장착했으며, HBM4E는 고밀도 소자를 통해 14+ Gbps의 고속 작동을 실현했습니다.","category":"업계 동향","source":"IT之家（RSS）","aggregationSource":"IT之家（RSS）","pageTitle":"삼성은 HBM5 메모리에 2nm 기반 웨이퍼를 도입할 계획이며, HBM4E에 비해 실행 속도가 50% 이상 향상될 예정입니다 - Aioga AI 뉴스","description":"삼성전자는 HBM5 세대에 2nm 기반 웨이퍼를 적용할 계획을 확인했으며, 이 메모리의 작동 속도는 HBM4E보다 50% 이상 향상될 것으로 예상됩니다. 이 메모리 스택은 성능과 에너지 효율의 큰 개선을 목표로 2nm 공정을 선택했으며, 기반 웨이퍼는 더 높은 밀도의 TSV(실리콘 관통 전극)를 지원할 것입니다. 이전에...","url":"https://www.aioga.com/ko/news/cms2klej901rwro3ff4vplzjv/","contentTranslated":true,"sourceHash":"b37b2f9023069d68","translatedAt":"2026-07-27T02:03:47.276Z"},"es":{"title":"Samsung planea introducir obleas base de 2nm en la memoria HBM5, con una velocidad de funcionamiento superior en más del 50% a la de HBM4E","summary":"Samsung Electronics confirmó planes de aplicar obleas base de 2 nm en la generación HBM5, cuyo ritmo de funcionamiento se espera supere en más del 50% al de HBM4E. Esta pila de memoria adopta el proceso de 2 nm con el objetivo de lograr mejoras significativas en rendimiento y eficiencia energética, y las obleas base admitirán un mayor número de vías de silicio (TSV). Anteriormente, los HBM4 y HBM4E de Samsung contaban con obleas base de 4 nm, y el HBM4E logró una velocidad de funcionamiento de más de 14 Gbps mediante dispositivos de alta densidad.","category":"Industria","source":"IT之家（RSS）","aggregationSource":"IT之家（RSS）","pageTitle":"Samsung planea introducir obleas base de 2nm en la memoria HBM5, con una velocidad de funcionamiento superior en más del 50% a la de HBM4E - Aioga Noticias de IA","description":"Samsung Electronics confirmó planes de aplicar obleas base de 2 nm en la generación HBM5, cuyo ritmo de funcionamiento se espera supere en más del 50% al de HBM4E. Esta pila de mem...","url":"https://www.aioga.com/es/news/cms2klej901rwro3ff4vplzjv/","contentTranslated":true,"sourceHash":"b37b2f9023069d68","translatedAt":"2026-07-27T02:03:48.269Z"},"fr":{"title":"Samsung prévoit d'introduire des puces de base de 2 nm dans la mémoire HBM5, avec une vitesse de fonctionnement supérieure de plus de 50 % à celle de HBM4E","summary":"Samsung Electronics a confirmé son intention d'utiliser des puces de base en 2 nm pour la génération HBM5, dont la vitesse de fonctionnement devrait être supérieure de plus de 50 % à celle de la HBM4E. Ce choix de piles mémoire avec un procédé en 2 nm vise à réaliser des améliorations significatives en termes de performance et d'efficacité énergétique, et les puces de base permettront de supporter une densité plus élevée de trous traversants en silicium (TSV). Auparavant, les HBM4 et HBM4E de Samsung étaient toutes équipées de puces de base en 4 nm, dont la HBM4E atteignait des vitesses élevées de plus de 14 Gbps grâce à des dispositifs haute densité.","category":"Industrie","source":"IT之家（RSS）","aggregationSource":"IT之家（RSS）","pageTitle":"Samsung prévoit d'introduire des puces de base de 2 nm dans la mémoire HBM5, avec une vitesse de fonctionnement supérieure de plus de 50 % à celle de HBM4E - Aioga Actualités IA","description":"Samsung Electronics a confirmé son intention d'utiliser des puces de base en 2 nm pour la génération HBM5, dont la vitesse de fonctionnement devrait être supérieure de plus de 50 %...","url":"https://www.aioga.com/fr/news/cms2klej901rwro3ff4vplzjv/","contentTranslated":true,"sourceHash":"b37b2f9023069d68","translatedAt":"2026-07-27T02:04:30.569Z"},"de":{"title":"Samsung plant, 2-nm-Basischips in HBM5-Speicher einzuführen, die eine um mehr als 50 % höhere Geschwindigkeit als HBM4E erreichen.","summary":"Samsung Electronics bestätigt, dass es plant, bei der HBM5-Generation 2-nm-Basischips einzusetzen, deren Betriebsgeschwindigkeit voraussichtlich um mehr als 50 % im Vergleich zu HBM4E steigen wird. Dieser Speicherstapel wählt die 2-nm-Technologie, um erhebliche Verbesserungen bei Leistung und Energieeffizienz zu erreichen. Die Basischips werden eine höhere Dichte an Durchsilizium-Vias (TSV) unterstützen. Zuvor waren Samsungs HBM4- und HBM4E-Chips jeweils mit 4-nm-Basischips ausgestattet, wobei HBM4E durch hochdichte Bauelemente einen Hochgeschwindigkeitsbetrieb von über 14 Gbps ermöglichte.","category":"行业动态","source":"IT之家（RSS）","aggregationSource":"IT之家（RSS）","pageTitle":"Samsung plant, 2-nm-Basischips in HBM5-Speicher einzuführen, die eine um mehr als 50 % höhere Geschwindigkeit als HBM4E erreichen. - Aioga KI-News","description":"Samsung Electronics bestätigt, dass es plant, bei der HBM5-Generation 2-nm-Basischips einzusetzen, deren Betriebsgeschwindigkeit voraussichtlich um mehr als 50 % im Vergleich zu HB...","url":"https://www.aioga.com/de/news/cms2klej901rwro3ff4vplzjv/","contentTranslated":true,"sourceHash":"b37b2f9023069d68","translatedAt":"2026-07-27T02:04:36.353Z"},"pt-BR":{"title":"A Samsung planeja introduzir chips básicos de 2nm na memória HBM5, com uma taxa de operação mais de 50% superior à HBM4E","summary":"A Samsung Electronics confirmou planos de aplicar substratos básicos de 2nm na geração HBM5, cuja velocidade de operação deve ser mais de 50% superior à do HBM4E. Essa pilha de memória escolheu o processo de 2nm visando uma melhoria significativa de desempenho e eficiência energética, e o substrato básico suportará uma densidade maior de vias através do silício (TSV). Anteriormente, os HBM4 e HBM4E da Samsung estavam equipados com substratos básicos de 4nm, sendo que o HBM4E alcançou operação de alta velocidade de mais de 14 Gbps através de dispositivos de alta densidade.","category":"行业动态","source":"IT之家（RSS）","aggregationSource":"IT之家（RSS）","pageTitle":"A Samsung planeja introduzir chips básicos de 2nm na memória HBM5, com uma taxa de operação mais de 50% superior à HBM4E - Aioga Notícias de IA","description":"A Samsung Electronics confirmou planos de aplicar substratos básicos de 2nm na geração HBM5, cuja velocidade de operação deve ser mais de 50% superior à do HBM4E. Essa pilha de mem...","url":"https://www.aioga.com/pt-BR/news/cms2klej901rwro3ff4vplzjv/","contentTranslated":true,"sourceHash":"b37b2f9023069d68","translatedAt":"2026-07-27T02:05:22.855Z"},"ru":{"title":"Samsung планирует внедрить 2-нм базовые чипы в память HBM5, с частотой работы более чем на 50% выше, чем у HBM4E","summary":"Samsung Electronics подтвердила планы использовать 2-нм базовые кристаллы для поколения HBM5, при этом ожидается, что их скорость работы повысится более чем на 50% по сравнению с HBM4E. Этот стек памяти выбрал 2-нм технологический процесс для достижения значительного улучшения производительности и энергоэффективности, а базовые кристаллы будут поддерживать более высокую плотность TSV (транзисторов сквозь кремний). Ранее HBM4 и HBM4E от Samsung использовали 4-нм базовые кристаллы, при этом HBM4E обеспечивал высокую скорость работы 14+ Гбит/с благодаря высокоплотным устройствам.","category":"行业动态","source":"IT之家（RSS）","aggregationSource":"IT之家（RSS）","pageTitle":"Samsung планирует внедрить 2-нм базовые чипы в память HBM5, с частотой работы более чем на 50% выше, чем у HBM4E - Aioga Новости ИИ","description":"Samsung Electronics подтвердила планы использовать 2-нм базовые кристаллы для поколения HBM5, при этом ожидается, что их скорость работы повысится более чем на 50% по сравнению с H...","url":"https://www.aioga.com/ru/news/cms2klej901rwro3ff4vplzjv/","contentTranslated":true,"sourceHash":"b37b2f9023069d68","translatedAt":"2026-07-27T02:05:25.741Z"},"ar":{"title":"تخطط شركة سامسونج لدمج رقاقة أساسية بحجم 2 نانومتر في ذاكرة HBM5، مع زيادة معدل التشغيل بأكثر من 50٪ مقارنة بـ HBM4E","summary":"أكدت شركة سامسونج للإلكترونيات خططها لتطبيق شرائح أساسية بحجم 2 نانومتر في الجيل HBM5، ومن المتوقع أن تتجاوز سرعة تشغيلها سرعة HBM4E بنسبة أكثر من 50%. تم اختيار تقنية 2 نانومتر لهذا الرصة الذاكرة لتحقيق تحسين كبير في الأداء وكفاءة الطاقة، وستدعم الشرائح الأساسية كثافة أعلى من الفتحات السيليكونية (TSV). في السابق، كانت شرائح HBM4 و HBM4E من سامسونج مزودة بشرائح أساسية بحجم 4 نانومتر، حيث حقق HBM4E تشغيلًا عالي السرعة يصل إلى أكثر من 14 جيجابت في الثانية من خلال الأجهزة عالية الكثافة.","category":"行业动态","source":"IT之家（RSS）","aggregationSource":"IT之家（RSS）","pageTitle":"تخطط شركة سامسونج لدمج رقاقة أساسية بحجم 2 نانومتر في ذاكرة HBM5، مع زيادة معدل التشغيل بأكثر من 50٪ مقارنة بـ HBM4E - Aioga أخبار الذكاء الاصطناعي","description":"أكدت شركة سامسونج للإلكترونيات خططها لتطبيق شرائح أساسية بحجم 2 نانومتر في الجيل HBM5، ومن المتوقع أن تتجاوز سرعة تشغيلها سرعة HBM4E بنسبة أكثر من 50%. تم اختيار تقنية 2 نانومتر له...","url":"https://www.aioga.com/ar/news/cms2klej901rwro3ff4vplzjv/","contentTranslated":true,"sourceHash":"b37b2f9023069d68","translatedAt":"2026-07-27T02:06:12.668Z"},"hi":{"title":"सैमसंग HBM5 मेमोरी में 2nm बेस चिप्स पेश करने की योजना बना रहा है, जिससे HBM4E की तुलना में संचालन गति 50% से अधिक बढ़ जाएगी","summary":"सैमसंग इलेक्ट्रॉनिक्स ने पुष्टि की है कि वह HBM5 पीढ़ी में 2nm बेस चिप का उपयोग करने की योजना बना रही है, जिसकी संचालन गति HBM4E की तुलना में 50% से अधिक बढ़ने की उम्मीद है। यह मेमोरी स्टैक 2nm प्रक्रिया का चयन प्रदर्शन और ऊर्जा दक्षता में महत्वपूर्ण सुधार हासिल करने के लिए करता है, और बेस चिप उच्च घनत्व वाले सिलिकॉन वेया (TSV) का समर्थन करेगा। इससे पहले, सैमसंग के HBM4 और HBM4E दोनों में 4nm बेस चिप्स थे, जिनमें HBM4E ने उच्च घनत्व डिवाइस के माध्यम से 14+ Gbps उच्च गति संचालन को सक्षम किया था।","category":"行业动态","source":"IT之家（RSS）","aggregationSource":"IT之家（RSS）","pageTitle":"सैमसंग HBM5 मेमोरी में 2nm बेस चिप्स पेश करने की योजना बना रहा है, जिससे HBM4E की तुलना में संचालन गति 50% से अधिक बढ़ जाएगी - Aioga AI समाचार","description":"सैमसंग इलेक्ट्रॉनिक्स ने पुष्टि की है कि वह HBM5 पीढ़ी में 2nm बेस चिप का उपयोग करने की योजना बना रही है, जिसकी संचालन गति HBM4E की तुलना में 50% से अधिक बढ़ने की उम्मीद है। यह मेम...","url":"https://www.aioga.com/hi/news/cms2klej901rwro3ff4vplzjv/","contentTranslated":true,"sourceHash":"b37b2f9023069d68","translatedAt":"2026-07-27T02:06:26.734Z"},"it":{"title":"Samsung prevede di introdurre chip base a 2nm nella memoria HBM5, con una velocità operativa superiore del 50% rispetto all'HBM4E","summary":"Samsung Electronics ha confermato di pianificare l'applicazione dei wafer di base a 2 nm nella generazione HBM5, la cui velocità operativa dovrebbe aumentare di oltre il 50% rispetto all'HBM4E. Questo stack di memoria sceglie il processo a 2 nm per ottenere miglioramenti significativi in termini di prestazioni ed efficienza energetica, e i wafer di base supporteranno TSV (Through-Silicon Via) a densità più elevata. In precedenza, gli HBM4 e HBM4E di Samsung erano entrambi dotati di wafer di base a 4 nm, e l'HBM4E ha raggiunto un funzionamento ad alta velocità di oltre 14 Gbps grazie a dispositivi ad alta densità.","category":"行业动态","source":"IT之家（RSS）","aggregationSource":"IT之家（RSS）","pageTitle":"Samsung prevede di introdurre chip base a 2nm nella memoria HBM5, con una velocità operativa superiore del 50% rispetto all'HBM4E - Aioga Notizie IA","description":"Samsung Electronics ha confermato di pianificare l'applicazione dei wafer di base a 2 nm nella generazione HBM5, la cui velocità operativa dovrebbe aumentare di oltre il 50% rispet...","url":"https://www.aioga.com/it/news/cms2klej901rwro3ff4vplzjv/","contentTranslated":true,"sourceHash":"b37b2f9023069d68","translatedAt":"2026-07-27T02:07:06.236Z"},"nl":{"title":"Samsung is van plan om 2nm-basischips in HBM5-geheugen te introduceren, met een snelheid die meer dan 50% hoger ligt dan HBM4E","summary":"Samsung Electronics bevestigt dat het van plan is om in de HBM5-generatie 2nm-basischips toe te passen, waarvan de verwachte snelheid meer dan 50% hoger is dan die van HBM4E. Deze geheugenschikking kiest voor het 2nm-proces met als doel aanzienlijke verbeteringen in prestaties en energie-efficiëntie te realiseren, en de basischip zal hogere dichtheden van siliconen via-holes (TSV) ondersteunen. Eerder waren Samsungs HBM4 en HBM4E beide uitgerust met 4nm-basischips, waarbij HBM4E een hoge snelheid van 14+ Gbps bereikte door middel van apparaten met hoge dichtheid.","category":"行业动态","source":"IT之家（RSS）","aggregationSource":"IT之家（RSS）","pageTitle":"Samsung is van plan om 2nm-basischips in HBM5-geheugen te introduceren, met een snelheid die meer dan 50% hoger ligt dan HBM4E - Aioga AI-nieuws","description":"Samsung Electronics bevestigt dat het van plan is om in de HBM5-generatie 2nm-basischips toe te passen, waarvan de verwachte snelheid meer dan 50% hoger is dan die van HBM4E. Deze...","url":"https://www.aioga.com/nl/news/cms2klej901rwro3ff4vplzjv/","contentTranslated":true,"sourceHash":"b37b2f9023069d68","translatedAt":"2026-07-27T02:07:11.247Z"},"tr":{"title":"Samsung, HBM5 belleğinde 2nm temel yongaları tanıtmayı planlıyor ve çalışma hızı HBM4E'ye göre %50'den fazla artacak","summary":"Samsung Electronics, HBM5 neslinde 2nm temel çip uygulamayı planladığını doğruladı ve çalışma hızının HBM4E'ye göre %50'den fazla artması bekleniyor. Bu bellek yığını, performans ve enerji verimliliğinde önemli iyileştirmeler sağlamak amacıyla 2nm teknolojisini seçti ve temel çip, daha yüksek yoğunlukta silikon delikli bağlantıları (TSV) destekleyecek. Daha önce Samsung'un HBM4 ve HBM4E'si 4nm temel çip ile donatılmıştı ve HBM4E yüksek yoğunluklu aygıtlar sayesinde 14+ Gbps yüksek hızlı çalışmayı başardı.","category":"行业动态","source":"IT之家（RSS）","aggregationSource":"IT之家（RSS）","pageTitle":"Samsung, HBM5 belleğinde 2nm temel yongaları tanıtmayı planlıyor ve çalışma hızı HBM4E'ye göre %50'den fazla artacak - Aioga AI Haberleri","description":"Samsung Electronics, HBM5 neslinde 2nm temel çip uygulamayı planladığını doğruladı ve çalışma hızının HBM4E'ye göre %50'den fazla artması bekleniyor. Bu bellek yığını, performans v...","url":"https://www.aioga.com/tr/news/cms2klej901rwro3ff4vplzjv/","contentTranslated":true,"sourceHash":"b37b2f9023069d68","translatedAt":"2026-07-27T02:07:54.784Z"},"vi":{"title":"Samsung có kế hoạch đưa chip cơ bản 2nm vào bộ nhớ HBM5, tốc độ hoạt động tăng hơn 50% so với HBM4E","summary":"Samsung Electronics xác nhận kế hoạch ứng dụng chip cơ bản 2nm trong thế hệ HBM5, tốc độ vận hành dự kiến sẽ tăng hơn 50% so với HBM4E. Bộ nhớ này chọn quy trình 2nm nhằm đạt được cải tiến đáng kể về hiệu suất và hiệu quả năng lượng, chip cơ bản sẽ hỗ trợ mật độ lỗ dẫn quang (TSV) cao hơn. Trước đó, HBM4 và HBM4E của Samsung đều được trang bị chip cơ bản 4nm, trong đó HBM4E đạt tốc độ cao 14+ Gbps nhờ thiết bị mật độ cao.","category":"行业动态","source":"IT之家（RSS）","aggregationSource":"IT之家（RSS）","pageTitle":"Samsung có kế hoạch đưa chip cơ bản 2nm vào bộ nhớ HBM5, tốc độ hoạt động tăng hơn 50% so với HBM4E - Tin tức AI Aioga","description":"Samsung Electronics xác nhận kế hoạch ứng dụng chip cơ bản 2nm trong thế hệ HBM5, tốc độ vận hành dự kiến sẽ tăng hơn 50% so với HBM4E. Bộ nhớ này chọn quy trình 2nm nhằm đạt được...","url":"https://www.aioga.com/vi/news/cms2klej901rwro3ff4vplzjv/","contentTranslated":true,"sourceHash":"b37b2f9023069d68","translatedAt":"2026-07-27T02:07:58.778Z"},"id":{"title":"Samsung berencana untuk memperkenalkan wafer dasar 2nm dalam memori HBM5, dengan kecepatan operasi meningkat lebih dari 50% dibandingkan HBM4E","summary":"Samsung Electronics mengonfirmasi rencananya untuk menggunakan wafer dasar 2nm pada generasi HBM5, dengan kecepatan operasional yang diperkirakan meningkat lebih dari 50% dibandingkan HBM4E. Tumpukan memori ini memilih proses 2nm untuk mencapai peningkatan kinerja dan efisiensi energi yang signifikan, dan wafer dasar akan mendukung TSV (Through-Silicon Via) dengan kepadatan lebih tinggi. Sebelumnya, HBM4 dan HBM4E Samsung keduanya dilengkapi dengan wafer dasar 4nm, di mana HBM4E mencapai kecepatan tinggi 14+ Gbps melalui perangkat kepadatan tinggi.","category":"行业动态","source":"IT之家（RSS）","aggregationSource":"IT之家（RSS）","pageTitle":"Samsung berencana untuk memperkenalkan wafer dasar 2nm dalam memori HBM5, dengan kecepatan operasi meningkat lebih dari 50% dibandingkan HBM4E - Berita AI Aioga","description":"Samsung Electronics mengonfirmasi rencananya untuk menggunakan wafer dasar 2nm pada generasi HBM5, dengan kecepatan operasional yang diperkirakan meningkat lebih dari 50% dibanding...","url":"https://www.aioga.com/id/news/cms2klej901rwro3ff4vplzjv/","contentTranslated":true,"sourceHash":"b37b2f9023069d68","translatedAt":"2026-07-27T02:08:40.829Z"},"th":{"title":"ซัมซุงวางแผนที่จะนำชิปเปลือยพื้นฐาน 2nm มาใช้ในหน่วยความจำ HBM5 โดยอัตราการทำงานจะเพิ่มขึ้นกว่า HBM4E กว่า 50%","summary":"ซัมซุงอิเล็กทรอนิกส์ยืนยันแผนการใช้ชิปเบส 2 นาโนเมตรกับ HBM5 รุ่นใหม่ โดยคาดว่าความเร็วการทำงานจะเพิ่มขึ้นมากกว่า 50% เมื่อเทียบกับ HBM4E หน่วยความจำสแตกนี้เลือกใช้กระบวนการ 2 นาโนเมตรเพื่อให้ได้ประสิทธิภาพและประสิทธิภาพด้านพลังงานที่ดีขึ้นอย่างมาก ชิปเบสจะรองรับผ่านซิลิคอนแบบเต็มความหนาแน่น (TSV) ได้สูงขึ้น ก่อนหน้านี้ HBM4 และ HBM4E ของซัมซุงมีชิปเบส 4 นาโนเมตร โดย HBM4E ทำงานความเร็วสูงกว่า 14 Gbps ด้วยอุปกรณ์ความหนาแน่นสูง","category":"行业动态","source":"IT之家（RSS）","aggregationSource":"IT之家（RSS）","pageTitle":"ซัมซุงวางแผนที่จะนำชิปเปลือยพื้นฐาน 2nm มาใช้ในหน่วยความจำ HBM5 โดยอัตราการทำงานจะเพิ่มขึ้นกว่า HBM4E กว่า 50% - ข่าว AI Aioga","description":"ซัมซุงอิเล็กทรอนิกส์ยืนยันแผนการใช้ชิปเบส 2 นาโนเมตรกับ HBM5 รุ่นใหม่ โดยคาดว่าความเร็วการทำงานจะเพิ่มขึ้นมากกว่า 50% เมื่อเทียบกับ HBM4E หน่วยความจำสแตกนี้เลือกใช้กระบวนการ 2 นาโน...","url":"https://www.aioga.com/th/news/cms2klej901rwro3ff4vplzjv/","contentTranslated":true,"sourceHash":"b37b2f9023069d68","translatedAt":"2026-07-27T02:08:54.525Z"},"pl":{"title":"Samsung planuje wprowadzenie 2nm bazowych chipów do pamięci HBM5, co zwiększy prędkość działania o ponad 50% w porównaniu z HBM4E","summary":"Samsung Electronics potwierdził plany zastosowania w generacji HBM5 bazowych chipów 2nm, których przewidywana szybkość działania ma wzrosnąć ponad 50% w porównaniu z HBM4E. Ten stos pamięci, wybrany do procesu 2nm, ma na celu znaczną poprawę wydajności i efektywności energetycznej, a bazowe chipy będą obsługiwać gęstsze przeloty krzemowe (TSV). Wcześniej HBM4 i HBM4E Samsunga były wyposażone w bazowe chipy 4nm, przy czym HBM4E osiągał prędkość ponad 14 Gbps dzięki wysoko gęstym urządzeniom.","category":"行业动态","source":"IT之家（RSS）","aggregationSource":"IT之家（RSS）","pageTitle":"Samsung planuje wprowadzenie 2nm bazowych chipów do pamięci HBM5, co zwiększy prędkość działania o ponad 50% w porównaniu z HBM4E - Aioga Wiadomości AI","description":"Samsung Electronics potwierdził plany zastosowania w generacji HBM5 bazowych chipów 2nm, których przewidywana szybkość działania ma wzrosnąć ponad 50% w porównaniu z HBM4E. Ten sto...","url":"https://www.aioga.com/pl/news/cms2klej901rwro3ff4vplzjv/","contentTranslated":true,"sourceHash":"b37b2f9023069d68","translatedAt":"2026-07-27T02:09:41.508Z"}}}}