{"@context":"https://schema.org","@type":"NewsArticle","generatedAt":"2026-08-11T09:21:12.743Z","headline":"超400层：三星展示业界首款V10 BV-NAND，存储密度提升约58%","description":"三星在2026年未来存储与内存大会上首发V10 BV-NAND，采用Bonding V-NAND架构，层数超400层，内存密度较V9提升约58%。同时推出行业首发的zHBM与zNAND-O概念产品，其中zHBM性能约为HBM5的8倍，内存密度超HBM5 10倍以上。三星还展示了涵盖HBM4E、HBM5、LPDDR5X-PIM与PM1763的AI内存与存储产品组合。","url":"https://www.aioga.com/news/cmsfbvfwj1mnbro2exv98gqlw/","mainEntityOfPage":"https://www.aioga.com/news/cmsfbvfwj1mnbro2exv98gqlw/","datePublished":"2026-08-04T23:24:48.000Z","dateModified":"2026-08-04T23:24:48.000Z","inLanguage":"zh-CN","publisher":{"@type":"NewsMediaOrganization","name":"Aioga","url":"https://www.aioga.com"},"citation":["https://www.ithome.com/0/985/746.htm","https://aihot.virxact.com/items/cmsfbvfwj1mnbro2exv98gqlw"],"canonicalUrl":"https://www.aioga.com/news/cmsfbvfwj1mnbro2exv98gqlw/","directAnswer":{"@type":"Answer","text":"三星在2026年未来存储与内存大会展示首款V10 BV-NAND，采用Bonding V-NAND架构，层数超过400层，内存密度较V9提升约58%，并公布zHBM、zNAND-O等概念产品。","url":"https://www.aioga.com/news/cmsfbvfwj1mnbro2exv98gqlw/","dateCreated":"2026-08-04T23:24:48.000Z","author":{"@type":"Organization","@id":"https://www.aioga.com/authors/aioga-editorial/#editorial-team","name":"Aioga Editorial Team","url":"https://www.aioga.com/authors/aioga-editorial/"}},"evidence":[{"@type":"CreativeWork","name":"IT之家 source article","url":"https://www.ithome.com/0/985/746.htm","datePublished":"2026-08-04T23:24:48.000Z","provider":{"@type":"Organization","name":"IT之家","url":"https://www.ithome.com/0/985/746.htm"}},{"@type":"CreativeWork","name":"AIHot archive 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10倍以上。三星还展示了涵盖HBM4E、HBM5、LPDDR5X-PIM与PM1763的AI内存与存储产品组合。","source":"IT之家（RSS）","sourceUrl":"https://www.ithome.com/0/985/746.htm","aiHotUrl":"https://aihot.virxact.com/items/cmsfbvfwj1mnbro2exv98gqlw","publishedAt":"2026-08-04T23:24:48.000Z","category":"产品更新","score":56,"selected":false,"articleBody":["IT之家：https://www.ithome.com/ 8 月 5 日消息，三星公司今天（8 月 5 日）发布博文，宣布其在 2026 年未来存储与内存大会（FMS）上，概述了面向人工智能基础设施的 3D 内存路线图， 重点介绍了 DRAM、NAND 闪存、企业级存储、先进封装和半导体制造方面的最新进展。","在“引领人工智能革命浪潮：内存与存储架构的 3D 创新”主题演讲中，三星执行副总裁兼闪存产品与技术负责人李镇烨（Jin-Yub Lee）和副总裁兼 DRAM 设计团队项目负责人金京伦（Kyungryun Kim）阐述了公司未来内存架构的发展路线图。","在概念产品方面，三星推出 zHBM 与 zNAND-O 概念产品，均为行业首发。","为满足先进 AI 计算需求，zHBM 打破传统设计，将 HBM（高带宽内存）直接垂直堆叠于 AI 加速器上方。此举缩短了数据传输距离，提升了带宽与能效，满足大规模 AI 训练与推理对超高速数据处理的需求。","IT之家援引博文介绍，结合下一代接口系统，zHBM 性能约为 HBM5 的 8 倍。借助下一代晶圆键合技术，zHBM 的内存密度超 HBM5 10 倍以上，能效提升 3 倍，热阻降低一半以上。","此外，zHBM 支持客户定制化设计，允许在内存与 AI 加速器之间的中间层集成定制化 IP，以扩展内存容量并提升加速器性能。","zNAND-O 是基于 V-NAND 技术构建的下一代高性能 NAND 解决方案，目前正开发 4 层与 8 层版本。该方案结合高空间效率、提升的 I/O 性能与低延迟特性，专为支持实时、数据密集型 AI 应用的边缘 AI 环境优化。","三星首发 V10 BV-NAND，采用全新的 Bonding V-NAND 架构。距 2013 年在 Flash Memory Summit 推出行业首款 V-NAND 技术已过 13 年，此举标志着其 NAND 创新的又一里程碑。","V10 BV-NAND 拥有超 400 层，通过晶圆键合技术堆叠内存单元， 内存密度较上一代（V9）提升约 58%。","除层数增加外，其读取、写入与 I/O 性能均优于上一代，为未来 AI 系统与应用提供高性能、大容量 NAND 支持。","三星展示了涵盖 HBM4E、HBM5、LPDDR5X-PIM 与 PM1763 的 AI 内存与存储产品组合。今年 2 月，三星采用 1c DRAM 与 4 纳米基础裸片技术，率先实现 HBM4 量产。5 月，三星率先向全球客户交付 HBM4E 样品。","LPDDR5X-PIM 是行业首款采用存内处理技术的 LPDDR 内存，旨在通过在内存内部执行数据处理，提升数据移动与功耗效率。企业存储方面，展出了 PM1763 与 BM1773，以满足 AI 数据中心不断增长的存储需求。"],"articleImages":[{"sourceUrl":"https://img.ithome.com/newsuploadfiles/2026/8/7b149b1d-5161-45f9-acc7-41a281ce21d7.jpg?x-bce-process=image/format,f_auto","alt":"三星整合了存储器、逻辑设计、晶圆代工和先进封装能力","afterParagraph":2,"url":"/media/articles/cmsfbvfwj1mnbro2exv98gqlw/8608230e76377a17.webp"},{"sourceUrl":"https://img.ithome.com/newsuploadfiles/2026/8/ceedce70-352e-493f-a2c0-88be9e9655b3.jpg?x-bce-process=image/format,f_auto","alt":"三星zHBM与HBM4E和HBM5的性能比较","afterParagraph":3,"url":"/media/articles/cmsfbvfwj1mnbro2exv98gqlw/19fcbbede2c5a72c.jpg"},{"sourceUrl":"https://img.ithome.com/newsuploadfiles/2026/8/f19627d0-ede6-48c5-8d39-f416e0d0eea5.jpg?x-bce-process=image/format,f_auto","alt":"三星 zNAND-O 设备内 NAND 概念","afterParagraph":6,"url":"/media/articles/cmsfbvfwj1mnbro2exv98gqlw/6c63ed3822752c99.jpg"},{"sourceUrl":"https://img.ithome.com/newsuploadfiles/2026/8/31c1c790-e5d7-49e9-82e9-8fe177f179b3.jpg?x-bce-process=image/format,f_auto","alt":"三星 V10 BV-NAND 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V-NAND架构，层数超400层，内存密度较V9提升约58%。同时推出行业首发的zHBM与zNAND-O概念产品，其中zHBM性能约为HBM5的8倍，内存密度超HBM5 10倍以上。三星还展示了涵盖HBM4E、HBM5、LPDDR5X-PIM与PM1763的AI内存与存储产品组合。","category":"产品更新","source":"IT之家","aggregationSource":"IT之家（RSS）","pageTitle":"超400层：三星展示业界首款V10 BV-NAND，存储密度提升约58% - Aioga AI资讯","description":"三星在2026年未来存储与内存大会上首发V10 BV-NAND，采用Bonding V-NAND架构，层数超400层，内存密度较V9提升约58%。同时推出行业首发的zHBM与zNAND-O概念产品，其中zHBM性能约为HBM5的8倍，内存密度超HBM5 10倍以上。三星还展示了涵盖HBM4E、HBM5、LPDDR5X-PIM与PM1763的AI内存与存储产品...","url":"https://www.aioga.com/news/cmsfbvfwj1mnbro2exv98gqlw/","articleBody":["超400层：三星展示业界首款V10 BV-NAND，存储密度提升约58% 这条更新来自 ithome.com，发布时间为 2026-08-04，Aioga 保留原文入口以便核验。","摘要：三星在2026年未来存储与内存大会上首发V10 BV-NAND，采用Bonding V-NAND架构，层数超400层，内存密度较V9提升约58%。同时推出行业首发的zHBM与zNAND-O概念产品，其中zHBM性能约为HBM5的8倍，内存密度超HBM5 10倍以上。三星还展示了涵盖HBM4E、HBM5、LPDDR5X-PIM与PM1763的AI内存与存储产品组合。","背景：三星此次概述了面向人工智能基础设施的3D内存路线图，范围涵盖DRAM、NAND闪存、企业级存储、先进封装与半导体制造，并展示HBM4E、HBM5、LPDDR5X-PIM及PM1763等产品组合。","Aioga 观察：Aioga判断，V10 BV-NAND体现三星继续通过层数增加与键合架构推进存储密度；zHBM将内存垂直堆叠于AI加速器上方，则显示其探索缩短数据传输距离、改善带宽和能效的方向。","影响与后续：若公开指标能够在后续产品中实现，V10 BV-NAND可能提高单位空间的存储容量；zHBM与zNAND-O则可能分别影响高带宽内存集成方式及边缘AI存储设计，但材料仅将二者称为概念产品。 值得关注三星后续是否披露V10 BV-NAND的量产时间、具体容量与终端应用，以及zHBM、zNAND-O的验证进度、客户采用情况和实测数据。目前材料未提供这些信息，不宜据此判断商业化节奏。"]},"en":{"title":"Over 400 layers: Samsung showcases industry's first V10 BV-NAND, with storage density increased by about 58%","summary":"Samsung will debut V10 BV-NAND at the 2026 Future Storage & Memory Conference, featuring a Bonding V-NAND architecture with over 400 layers and about 58% higher memory density than V9. At the same time, it launched industry-first zHBM and zNAND-O concept products, with zHBM performance about eight times that of HBM5 and memory density more than ten times that of HBM5. Samsung also showcased its AI memory and storage product portfolio covering HBM4E, HBM5, LPDDR5X-PIM, and PM1763.","category":"Products","source":"IT之家（RSS）","aggregationSource":"IT之家（RSS）","pageTitle":"Over 400 layers: Samsung showcases industry's first V10 BV-NAND, with storage density increased by about 58% - Aioga AI News","description":"Samsung will debut V10 BV-NAND at the 2026 Future Storage & Memory Conference, featuring a Bonding V-NAND architecture with over 400 layers and about 58% higher memory density than...","url":"https://www.aioga.com/en/news/cmsfbvfwj1mnbro2exv98gqlw/","contentTranslated":true,"sourceHash":"5e50c01132bba6b1","translatedAt":"2026-08-05T00:21:42.234Z"},"ja":{"title":"400層以上:サムスンが業界初のV10 BV-NANDを発表、ストレージ密度が約58%向上","summary":"サムスンは2026年のFuture Storage & Memory ConferenceでV10 BV-NANDを発表し、400層以上を持つボンディングV-NANDアーキテクチャとV9より約58%高いメモリ密度を特徴とします。 同時に、業界初のzHBMおよびzNAND-Oコンセプト製品を発表し、zHBMの性能はHBM5の約8倍、メモリ密度はHBM5の10倍以上に達しました。 サムスンはまた、HBM4E、HBM5、LPDDR5X-PIM、PM1763をカバーするAIメモリおよびストレージ製品ポートフォリオも披露しました。","category":"製品更新","source":"IT之家（RSS）","aggregationSource":"IT之家（RSS）","pageTitle":"400層以上:サムスンが業界初のV10 BV-NANDを発表、ストレージ密度が約58%向上 - Aioga AIニュース","description":"サムスンは2026年のFuture Storage & Memory ConferenceでV10 BV-NANDを発表し、400層以上を持つボンディングV-NANDアーキテクチャとV9より約58%高いメモリ密度を特徴とします。 同時に、業界初のzHBMおよびzNAND-Oコンセプト製品を発表し、zHBMの性能はHBM5の約8倍、メモリ密度はHBM5の10倍...","url":"https://www.aioga.com/ja/news/cmsfbvfwj1mnbro2exv98gqlw/","contentTranslated":true,"sourceHash":"5e50c01132bba6b1","translatedAt":"2026-08-05T00:21:42.553Z"},"ko":{"title":"400개 이상의 레이어: 삼성은 업계 최초로 V10 BV-NAND를 선보이며, 저장 밀도가 약 58% 증가했습니다","summary":"삼성은 2026년 미래 스토리지 및 메모리 컨퍼런스에서 V10 BV-NAND를 선보일 예정이며, 400개 이상의 레이어와 V9보다 약 58% 높은 메모리 밀도를 가진 본딩 V-NAND 아키텍처를 특징으로 합니다. 동시에 업계 최초로 zHBM과 zNAND-O 개념 제품을 출시했으며, zHBM 성능은 HBM5의 약 8배, 메모리 밀도는 HBM5보다 10배 이상 높습니다. 삼성은 또한 HBM4E, HBM5, LPDDR5X-PIM, PM1763을 포함하는 AI 메모리 및 저장 제품 포트폴리오를 선보였습니다.","category":"제품 업데이트","source":"IT之家（RSS）","aggregationSource":"IT之家（RSS）","pageTitle":"400개 이상의 레이어: 삼성은 업계 최초로 V10 BV-NAND를 선보이며, 저장 밀도가 약 58% 증가했습니다 - Aioga AI 뉴스","description":"삼성은 2026년 미래 스토리지 및 메모리 컨퍼런스에서 V10 BV-NAND를 선보일 예정이며, 400개 이상의 레이어와 V9보다 약 58% 높은 메모리 밀도를 가진 본딩 V-NAND 아키텍처를 특징으로 합니다. 동시에 업계 최초로 zHBM과 zNAND-O 개념 제품을 출시했으며, zHBM 성능은 HBM5의 약 8배, 메...","url":"https://www.aioga.com/ko/news/cmsfbvfwj1mnbro2exv98gqlw/","contentTranslated":true,"sourceHash":"5e50c01132bba6b1","translatedAt":"2026-08-05T00:21:51.041Z"},"es":{"title":"Más de 400 capas: Samsung presenta el primer BV-NAND V10 de la industria, con una densidad de almacenamiento aumentada en aproximadamente un 58%","summary":"Samsung presentará el V10 BV-NAND en la Future Storage & Memory Conference 2026, con una arquitectura V-NAND de enlace con más de 400 capas y una densidad de memoria aproximadamente un 58% superior a la del V9. Al mismo tiempo, lanzó productos conceptuales zHBM y zNAND-O, pioneros en la industria, con un rendimiento zHBM aproximadamente ocho veces superior al del HBM5 y una densidad de memoria más de diez veces superior a la del HBM5. Samsung también presentó su cartera de productos de memoria y almacenamiento de IA, que abarcan HBM4E, HBM5, LPDDR5X-PIM y PM1763.","category":"Productos","source":"IT之家（RSS）","aggregationSource":"IT之家（RSS）","pageTitle":"Más de 400 capas: Samsung presenta el primer BV-NAND V10 de la industria, con una densidad de almacenamiento aumentada en aproximadamente un 58% - Aioga Noticias de IA","description":"Samsung presentará el V10 BV-NAND en la Future Storage & Memory Conference 2026, con una arquitectura V-NAND de enlace con más de 400 capas y una densidad de memoria aproximadament...","url":"https://www.aioga.com/es/news/cmsfbvfwj1mnbro2exv98gqlw/","contentTranslated":true,"sourceHash":"5e50c01132bba6b1","translatedAt":"2026-08-05T00:21:51.012Z"},"fr":{"title":"Plus de 400 couches : Samsung présente le premier V10 BV-NAND de l’industrie, avec une densité de stockage augmentée d’environ 58 %","summary":"Samsung présentera le V10 BV-NAND lors de la Future Storage & Memory Conference 2026, avec une architecture V-NAND de liaison avec plus de 400 couches et une densité mémoire environ 58 % supérieure à celle de la V9. Parallèlement, elle a lancé des concepts zHBM et zNAND-O, premiers dans l’industrie, avec des performances zHBM environ huit fois supérieures à celles de HBM5 et une densité mémoire plus de dix fois supérieure à HBM5. Samsung a également présenté son portefeuille de produits de mémoire et stockage IA couvrant HBM4E, HBM5, LPDDR5X-PIM et PM1763.","category":"Produits","source":"IT之家（RSS）","aggregationSource":"IT之家（RSS）","pageTitle":"Plus de 400 couches : Samsung présente le premier V10 BV-NAND de l’industrie, avec une densité de stockage augmentée d’environ 58 % - Aioga Actualités IA","description":"Samsung présentera le V10 BV-NAND lors de la Future Storage & Memory Conference 2026, avec une architecture V-NAND de liaison avec plus de 400 couches et une densité mémoire enviro...","url":"https://www.aioga.com/fr/news/cmsfbvfwj1mnbro2exv98gqlw/","contentTranslated":true,"sourceHash":"5e50c01132bba6b1","translatedAt":"2026-08-05T00:21:58.950Z"},"de":{"title":"Über 400 Schichten: Samsung präsentiert den ersten V10 BV-NAND der Branche, dessen Speicherdichte um etwa 58 % gesteigert wurde","summary":"Samsung wird V10 BV-NAND auf der Future Storage & Memory Conference 2026 vorstellen, mit einer Bonding V-NAND-Architektur mit über 400 Schichten und etwa 58 % höherer Speicherdichte als V9. Gleichzeitig brachte es branchenweit erste zHBM- und zNAND-O-Konzeptprodukte auf den Markt, mit einer etwa achtfachen zHBM-Leistung und einer mehr als zehnfachen Speicherdichte von HBM5. Samsung präsentierte außerdem sein Produktportfolio für KI-Speicher und -Speicher, das HBM4E, HBM5, LPDDR5X-PIM und PM1763 umfasst.","category":"产品更新","source":"IT之家（RSS）","aggregationSource":"IT之家（RSS）","pageTitle":"Über 400 Schichten: Samsung präsentiert den ersten V10 BV-NAND der Branche, dessen Speicherdichte um etwa 58 % gesteigert wurde - Aioga KI-News","description":"Samsung wird V10 BV-NAND auf der Future Storage & Memory Conference 2026 vorstellen, mit einer Bonding V-NAND-Architektur mit über 400 Schichten und etwa 58 % höherer Speicherdicht...","url":"https://www.aioga.com/de/news/cmsfbvfwj1mnbro2exv98gqlw/","contentTranslated":true,"sourceHash":"5e50c01132bba6b1","translatedAt":"2026-08-05T00:21:59.859Z"},"pt-BR":{"title":"Mais de 400 camadas: a Samsung apresenta o primeiro BV-NAND V10 da indústria, com densidade de armazenamento aumentada em cerca de 58%","summary":"A Samsung apresentará o V10 BV-NAND na Future Storage & Memory Conference de 2026, apresentando uma arquitetura V-NAND de ligação com mais de 400 camadas e cerca de 58% maior densidade de memória que a V9. Ao mesmo tempo, lançou produtos conceituais, zHBM e zNAND-O, pioneiros na indústria, com desempenho zHBM cerca de oito vezes maior que o do HBM5 e densidade de memória mais de dez vezes maior que a do HBM5. A Samsung também apresentou seu portfólio de produtos de memória e armazenamento com IA, abrangendo HBM4E, HBM5, LPDDR5X-PIM e PM1763.","category":"产品更新","source":"IT之家（RSS）","aggregationSource":"IT之家（RSS）","pageTitle":"Mais de 400 camadas: a Samsung apresenta o primeiro BV-NAND V10 da indústria, com densidade de armazenamento aumentada em cerca de 58% - Aioga Notícias de IA","description":"A Samsung apresentará o V10 BV-NAND na Future Storage & Memory Conference de 2026, apresentando uma arquitetura V-NAND de ligação com mais de 400 camadas e cerca de 58% maior densi...","url":"https://www.aioga.com/pt-BR/news/cmsfbvfwj1mnbro2exv98gqlw/","contentTranslated":true,"sourceHash":"5e50c01132bba6b1","translatedAt":"2026-08-05T00:22:08.506Z"},"ru":{"title":"Более 400 слоёв: Samsung демонстрирует первый в отрасли V10 BV-NAND, при этом плотность хранения увеличилась примерно на 58%","summary":"Samsung представит V10 BV-NAND на конференции Future Storage & Memory 2026 года, используя архитектуру Bonding V-NAND с более чем 400 слоями и примерно на 58% большей плотностью памяти, чем V9. Одновременно была выпущена первая в отрасли концептуальные продукты zHBM и zNAND-O, производительность zHBM примерно в восемь раз выше HBM5 и плотность памяти более чем в десять раз выше HBM5. Samsung также представила свой портфель продуктов памяти и хранения искусственного интеллекта, охватывающий HBM4E, HBM5, LPDDR5X-PIM и PM1763.","category":"产品更新","source":"IT之家（RSS）","aggregationSource":"IT之家（RSS）","pageTitle":"Более 400 слоёв: Samsung демонстрирует первый в отрасли V10 BV-NAND, при этом плотность хранения увеличилась примерно на 58% - Aioga Новости ИИ","description":"Samsung представит V10 BV-NAND на конференции Future Storage & Memory 2026 года, используя архитектуру Bonding V-NAND с более чем 400 слоями и примерно на 58% большей плотностью па...","url":"https://www.aioga.com/ru/news/cmsfbvfwj1mnbro2exv98gqlw/","contentTranslated":true,"sourceHash":"5e50c01132bba6b1","translatedAt":"2026-08-05T00:22:08.619Z"},"ar":{"title":"أكثر من 400 طبقة: سامسونج تعرض أول محرك V10 BV-NAND في الصناعة، مع زيادة كثافة التخزين بحوالي 58٪","summary":"ستعرض سامسونج V10 BV-NAND في مؤتمر المستقبل للتخزين والذاكرة لعام 2026، والذي يتميز ببنية V-NAND بنظام Bonding مع أكثر من 400 طبقة وكثافة ذاكرة أعلى بحوالي 58٪ من V9. وفي الوقت نفسه، أطلقت منتجات مفاهيم zHBM وzNAND-O الأولى في الصناعة، بأداء zHBM حوالي ثمانية أضعاف أداء HBM5 وكثافة ذاكرة تزيد عن عشرة أضعاف كثافة HBM5. كما عرضت سامسونج محفظتها لمنتجات الذكاء الاصطناعي للذاكرة والتخزين التي تغطي HBM4E وHBM5 و LPDDR5X-PIM وPM1763.","category":"产品更新","source":"IT之家（RSS）","aggregationSource":"IT之家（RSS）","pageTitle":"أكثر من 400 طبقة: سامسونج تعرض أول محرك V10 BV-NAND في الصناعة، مع زيادة كثافة التخزين بحوالي 58٪ - Aioga أخبار الذكاء الاصطناعي","description":"ستعرض سامسونج V10 BV-NAND في مؤتمر المستقبل للتخزين والذاكرة لعام 2026، والذي يتميز ببنية V-NAND بنظام Bonding مع أكثر من 400 طبقة وكثافة ذاكرة أعلى بحوالي 58٪ من V9. وفي الوقت نفس...","url":"https://www.aioga.com/ar/news/cmsfbvfwj1mnbro2exv98gqlw/","contentTranslated":true,"sourceHash":"5e50c01132bba6b1","translatedAt":"2026-08-05T00:22:17.360Z"},"hi":{"title":"400 से अधिक परतें: सैमसंग ने उद्योग का पहला V10 BV-NAND प्रदर्शित किया, जिसमें भंडारण घनत्व में लगभग 58% की वृद्धि हुई","summary":"सैमसंग 2026 फ्यूचर स्टोरेज एंड मेमोरी कॉन्फ्रेंस में वी10 बीवी-नंद की शुरुआत करेगा, जिसमें 400 से अधिक परतों के साथ एक बॉन्डिंग वी-नंद आर्किटेक्चर और वी9 की तुलना में लगभग 58% अधिक मेमोरी घनत्व शामिल है। उसी समय, इसने उद्योग-प्रथम zHBM और zNAND-O अवधारणा उत्पाद लॉन्च किए, जिसमें zHBM प्रदर्शन HBM5 से लगभग आठ गुना और मेमोरी घनत्व HBM5 से दस गुना अधिक था। सैमसंग ने HBM4E, HBM5, LPDDR5X-PIM और PM1763 को कवर करते हुए अपने AI मेमोरी और स्टोरेज उत्पाद पोर्टफोलियो का भी प्रदर्शन किया।","category":"产品更新","source":"IT之家（RSS）","aggregationSource":"IT之家（RSS）","pageTitle":"400 से अधिक परतें: सैमसंग ने उद्योग का पहला V10 BV-NAND प्रदर्शित किया, जिसमें भंडारण घनत्व में लगभग 58% की वृद्धि हुई - Aioga AI समाचार","description":"सैमसंग 2026 फ्यूचर स्टोरेज एंड मेमोरी कॉन्फ्रेंस में वी10 बीवी-नंद की शुरुआत करेगा, जिसमें 400 से अधिक परतों के साथ एक बॉन्डिंग वी-नंद आर्किटेक्चर और वी9 की तुलना में लगभग 58% अधिक...","url":"https://www.aioga.com/hi/news/cmsfbvfwj1mnbro2exv98gqlw/","contentTranslated":true,"sourceHash":"5e50c01132bba6b1","translatedAt":"2026-08-05T00:22:17.464Z"},"it":{"title":"Oltre 400 strati: Samsung presenta il primo V10 BV-NAND del settore, con densità di memoria aumentata di circa il 58%","summary":"Samsung presenterà il V10 BV-NAND alla Future Storage & Memory Conference 2026, con un'architettura V-NAND a Bonding con oltre 400 strati e una densità di memoria circa del 58% superiore rispetto alla V9. Contemporaneamente, lanciò prodotti concept zHBM e zNAND-O, pionieri nel settore, con prestazioni zHBM circa otto volte quelle di HBM5 e densità di memoria superiore a quella di HBM5. Samsung ha inoltre presentato il suo portafoglio di prodotti di memoria e storage AI che coprono HBM4E, HBM5, LPDDR5X-PIM e PM1763.","category":"产品更新","source":"IT之家（RSS）","aggregationSource":"IT之家（RSS）","pageTitle":"Oltre 400 strati: Samsung presenta il primo V10 BV-NAND del settore, con densità di memoria aumentata di circa il 58% - Aioga Notizie IA","description":"Samsung presenterà il V10 BV-NAND alla Future Storage & Memory Conference 2026, con un'architettura V-NAND a Bonding con oltre 400 strati e una densità di memoria circa del 58% sup...","url":"https://www.aioga.com/it/news/cmsfbvfwj1mnbro2exv98gqlw/","contentTranslated":true,"sourceHash":"5e50c01132bba6b1","translatedAt":"2026-08-05T00:22:25.167Z"},"nl":{"title":"Meer dan 400 lagen: Samsung presenteert de eerste V10 BV-NAND in de industrie, met een toename van de opslagdichtheid van ongeveer 58%.","summary":"Samsung zal V10 BV-NAND introduceren op de Future Storage & Memory Conference 2026, met een Bonding V-NAND architectuur met meer dan 400 lagen en ongeveer 58% hogere geheugendichtheid dan V9. Tegelijkertijd lanceerde het de eerste zHBM- en zNAND-O-conceptproducten in de industrie, met zHBM-prestaties ongeveer acht keer zo hoog als die van HBM5 en een geheugendichtheid meer dan tien keer die van HBM5. Samsung presenteerde ook zijn AI-geheugen- en opslagproductportfolio met HBM4E, HBM5, LPDDR5X-PIM en PM1763.","category":"产品更新","source":"IT之家（RSS）","aggregationSource":"IT之家（RSS）","pageTitle":"Meer dan 400 lagen: Samsung presenteert de eerste V10 BV-NAND in de industrie, met een toename van de opslagdichtheid van ongeveer 58%. - Aioga AI-nieuws","description":"Samsung zal V10 BV-NAND introduceren op de Future Storage & Memory Conference 2026, met een Bonding V-NAND architectuur met meer dan 400 lagen en ongeveer 58% hogere geheugendichth...","url":"https://www.aioga.com/nl/news/cmsfbvfwj1mnbro2exv98gqlw/","contentTranslated":true,"sourceHash":"5e50c01132bba6b1","translatedAt":"2026-08-05T00:22:26.220Z"},"tr":{"title":"400'den fazla katman: Samsung, depolama yoğunluğu yaklaşık %58 artmış olan endüstrinin ilk V10 BV-NAND'ını sergiliyor","summary":"Samsung, V10 BV-NAND'ı 2026 Gelecek Depolama ve Bellek Konferansı'nda tanıtacak; bu model, 400'den fazla katmanlı ve V9'dan yaklaşık %58 daha yüksek bellek yoğunluğuna sahip Bonding V-NAND mimarisiyle sunuluyor. Aynı zamanda, zHBM performansına HBM5'in yaklaşık sekiz katı, bellek yoğunluğuna ise HBM5'in on katından fazla olan zHBM ve zNAND-O konsept ürünlerini piyasaya sürdü. Samsung ayrıca HBM4E, HBM5, LPDDR5X-PIM ve PM1763'ü kapsayan yapay zeka bellek ve depolama ürün portföyünü de sergiledi.","category":"产品更新","source":"IT之家（RSS）","aggregationSource":"IT之家（RSS）","pageTitle":"400'den fazla katman: Samsung, depolama yoğunluğu yaklaşık %58 artmış olan endüstrinin ilk V10 BV-NAND'ını sergiliyor - Aioga AI Haberleri","description":"Samsung, V10 BV-NAND'ı 2026 Gelecek Depolama ve Bellek Konferansı'nda tanıtacak; bu model, 400'den fazla katmanlı ve V9'dan yaklaşık %58 daha yüksek bellek yoğunluğuna sahip Bondin...","url":"https://www.aioga.com/tr/news/cmsfbvfwj1mnbro2exv98gqlw/","contentTranslated":true,"sourceHash":"5e50c01132bba6b1","translatedAt":"2026-08-05T00:22:34.918Z"},"vi":{"title":"Hơn 400 lớp: Samsung giới thiệu chiếc BV-NAND V10 đầu tiên trong ngành, với mật độ lưu trữ tăng khoảng 58%","summary":"Samsung sẽ ra mắt V10 BV-NAND tại Hội nghị Lưu trữ & Bộ nhớ Tương lai 2026, với kiến trúc V-NAND Bonding với hơn 400 lớp và mật độ bộ nhớ cao hơn khoảng 58% so với V9. Đồng thời, họ ra mắt các sản phẩm ý tưởng zHBM và zNAND-O đầu tiên trong ngành, với hiệu năng zHBM gấp khoảng tám lần HBM5 và mật độ bộ nhớ gấp hơn mười lần HBM5. Samsung cũng giới thiệu danh mục sản phẩm bộ nhớ và lưu trữ AI bao gồm HBM4E, HBM5, LPDDR5X-PIM và PM1763.","category":"产品更新","source":"IT之家（RSS）","aggregationSource":"IT之家（RSS）","pageTitle":"Hơn 400 lớp: Samsung giới thiệu chiếc BV-NAND V10 đầu tiên trong ngành, với mật độ lưu trữ tăng khoảng 58% - Tin tức AI Aioga","description":"Samsung sẽ ra mắt V10 BV-NAND tại Hội nghị Lưu trữ & Bộ nhớ Tương lai 2026, với kiến trúc V-NAND Bonding với hơn 400 lớp và mật độ bộ nhớ cao hơn khoảng 58% so với V9. Đồng thời, h...","url":"https://www.aioga.com/vi/news/cmsfbvfwj1mnbro2exv98gqlw/","contentTranslated":true,"sourceHash":"5e50c01132bba6b1","translatedAt":"2026-08-05T00:22:34.908Z"},"id":{"title":"Lebih dari 400 lapisan: Samsung menampilkan V10 BV-NAND pertama di industri, dengan kepadatan penyimpanan meningkat sekitar 58%","summary":"Samsung akan memperkenalkan V10 BV-NAND pada Konferensi Penyimpanan & Memori Masa Depan 2026, menampilkan arsitektur Bonding V-NAND dengan lebih dari 400 lapisan dan kepadatan memori sekitar 58% lebih tinggi dibandingkan V9. Pada saat yang sama, mereka meluncurkan produk konsep zHBM dan zNAND-O pertama di industri, dengan performa zHBM sekitar delapan kali lipat HBM5 dan kepadatan memori lebih dari sepuluh kali lipat HBM5. Samsung juga menampilkan portofolio produk memori dan penyimpanan AI yang mencakup HBM4E, HBM5, LPDDR5X-PIM, dan PM1763.","category":"产品更新","source":"IT之家（RSS）","aggregationSource":"IT之家（RSS）","pageTitle":"Lebih dari 400 lapisan: Samsung menampilkan V10 BV-NAND pertama di industri, dengan kepadatan penyimpanan meningkat sekitar 58% - Berita AI Aioga","description":"Samsung akan memperkenalkan V10 BV-NAND pada Konferensi Penyimpanan & Memori Masa Depan 2026, menampilkan arsitektur Bonding V-NAND dengan lebih dari 400 lapisan dan kepadatan memo...","url":"https://www.aioga.com/id/news/cmsfbvfwj1mnbro2exv98gqlw/","contentTranslated":true,"sourceHash":"5e50c01132bba6b1","translatedAt":"2026-08-05T00:22:43.511Z"},"th":{"title":"มากกว่า 400 ชั้น: Samsung เปิดตัว V10 BV-NAND รุ่นแรกของอุตสาหกรรม โดยมีความหนาแน่นในการจัดเก็บเพิ่มขึ้นประมาณ 58%","summary":"Samsung จะเปิดตัว V10 BV-NAND ในงานประชุม Future Storage & Memory Conference ปี 2026 โดยมีสถาปัตยกรรม Bonding V-NAND มากกว่า 400 ชั้น และมีความหนาแน่นหน่วยความจําสูงกว่า V9 ประมาณ 58% ในเวลาเดียวกัน บริษัทได้เปิดตัวผลิตภัณฑ์แนวคิด zHBM และ zNAND-O ซึ่งเป็นครั้งแรกในอุตสาหกรรม โดยมีประสิทธิภาพ zHBM สูงกว่า HBM5 ประมาณแปดเท่า และความหนาแน่นของหน่วยความจําสูงกว่า HBM5 ถึงสิบเท่า ซัมซุงยังได้นําเสนอผลิตภัณฑ์หน่วยความจําและสตอเรจ AI ที่ครอบคลุม HBM4E, HBM5, LPDDR5X-PIM และ PM1763","category":"产品更新","source":"IT之家（RSS）","aggregationSource":"IT之家（RSS）","pageTitle":"มากกว่า 400 ชั้น: Samsung เปิดตัว V10 BV-NAND รุ่นแรกของอุตสาหกรรม โดยมีความหนาแน่นในการจัดเก็บเพิ่มขึ้นประมาณ 58% - ข่าว AI Aioga","description":"Samsung จะเปิดตัว V10 BV-NAND ในงานประชุม Future Storage & Memory Conference ปี 2026 โดยมีสถาปัตยกรรม Bonding V-NAND มากกว่า 400 ชั้น และมีความหนาแน่นหน่วยความจําสูงกว่า V9 ประมาณ...","url":"https://www.aioga.com/th/news/cmsfbvfwj1mnbro2exv98gqlw/","contentTranslated":true,"sourceHash":"5e50c01132bba6b1","translatedAt":"2026-08-05T00:22:43.764Z"},"pl":{"title":"Ponad 400 warstw: Samsung prezentuje pierwszy w branży V10 BV-NAND, z gęstością pamięci pamięci o około 58%","summary":"Samsung zaprezentuje V10 BV-NAND na konferencji Future Storage & Memory 2026, oferując architekturę Bonding V-NAND z ponad 400 warstwami i około 58% większą gęstością pamięci niż V9. Równocześnie wprowadziła na rynek pierwsze w branży koncepcyjne produkty zHBM i zNAND-O, z wydajnością zHBM około osiem razy wyższą niż HBM5 oraz gęstością pamięci ponad dziesięciokrotnie większą niż HBM5. Samsung zaprezentował także swoją ofertę pamięci i przechowywania AI obejmującą HBM4E, HBM5, LPDDR5X-PIM oraz PM1763.","category":"产品更新","source":"IT之家（RSS）","aggregationSource":"IT之家（RSS）","pageTitle":"Ponad 400 warstw: Samsung prezentuje pierwszy w branży V10 BV-NAND, z gęstością pamięci pamięci o około 58% - Aioga Wiadomości AI","description":"Samsung zaprezentuje V10 BV-NAND na konferencji Future Storage & Memory 2026, oferując architekturę Bonding V-NAND z ponad 400 warstwami i około 58% większą gęstością pamięci niż V...","url":"https://www.aioga.com/pl/news/cmsfbvfwj1mnbro2exv98gqlw/","contentTranslated":true,"sourceHash":"5e50c01132bba6b1","translatedAt":"2026-08-05T00:22:51.552Z"}}}}